Gallium Nitride

I am actively involved in understanding the physical mechanisms governing the high electron mobility transistors (HEMTs). In particular, I am investigating AlGaN/GaN HEMTs that  are potential candidates to construct radio frequency (RF) electronic circuits for future 5G communications, defense, and space applications. Lastly, my main I am is to develop machine learning based black box models for transient and AC analysis of AlGaN/GaN HEMTs.